Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells.

نویسندگان

  • E B Olshanetsky
  • Z D Kvon
  • G M Gusev
  • A D Levin
  • O E Raichev
  • N N Mikhailov
  • S A Dvoretsky
چکیده

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10  μm a quasiballistic transport via the edge states is observed.

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عنوان ژورنال:
  • Physical review letters

دوره 114 12  شماره 

صفحات  -

تاریخ انتشار 2015